The young research team of the ultra-high voltage insulated gate bipolar transistor (IGBT) chip of the Institute of Microelectronics of the Chinese Academy of Sciences is nervous and expecting. An IGBT chip designed by them was completed on the process line of a partner, Shanghai Hua Hong NEC Electronics Co., Ltd., and ultra high voltage testing was required.
The reason why they are nervous is because they have not picked up as much as foreign scientific research institutes or enterprises, but instead slammed voltage from 1700 volts directly to 6500 volts. This huge technical jump not only considers their capabilities but also considers the technological basis of China's integrated circuits.
Not long ago, the test was over and their product blocking voltage reached over 7100 volts. Shanghai Hua Hong NEC immediately announced to the outside world: "This marks the domestic high-voltage high-power IGBT chip with independent intellectual property rights, and it has taken a new step from design and development to process development."
"80s after" mission and opportunities "The biggest difficulty in the development of IGBT design and technology." Said Zhu Yangjun, a tall team leader born in 1980.
Zhu Yangjun introduced that IGBT chips are classified according to the blocking voltage level for different application fields. Among them, the 6500 volt series is the highest voltage level product in the market. Only the very few manufacturers in Europe and Japan have the relevant technologies and production capabilities. Although there are many difficulties from the device structure design to the manufacturing process, the main difficulty is how to make the blocking voltage more than 6500 volts.
For them, designing such an ultra-high voltage chip can be difficult.
First of all, the domestic IGBT chip manufacturing process foundation is relatively weak, and behind a lot of foreign; Second, the domestic IGBT chip development personnel are scarce, there are few experienced engineers; Third, the higher the voltage, the greater the design difficulty, and simulation software The accuracy of the model is also a problem, and the design cycle will be longer and longer, the terminal design will be more complex and difficult; in addition, the design and the technology need to be combined perfectly, and the same design will have different results on different production lines.
Zhu Yangjun will always remember the words of Ye Tianchun, director of the Institute of Microelectronics of the Chinese Academy of Sciences. "Young people must dare to take responsibility and have a sense of responsibility and mission."
So, what is the mission of their generation in microelectronics?
IGBT devices have been widely used in the fields of power grid, rail transit, industrial frequency conversion, new energy, electric vehicles, and household appliances. The Chinese market has the largest demand for IGBTs in the world and maintains a rapid growth trend every year. However, almost all of China's IGBT devices rely on imports.
"Developing IGBT chips with independent intellectual property rights in China is one of the major missions of this team." Ye Tianchun said.
Ye Tianchun introduced that since the beginning of 2007, the country has gradually increased its research and development support in this area. The Ministry of Science and Technology, the National Development and Reform Commission, and the Ministry of Industry and Information Technology have gradually increased their investment in scientific research and industrialization. In particular, in 2010, the country implemented a major science and technology project for "very large-scale integrated circuit manufacturing equipment and complete sets of processes," and attacked the entire power electronics industry from raw materials, The three key links of chip manufacturing and module packaging give strong support.
The Silicon Devices and Integration Technology Research Laboratory of the Institute of Microelectronics of the Chinese Academy of Sciences thus welcomes new opportunities for expansion.
Han Zhengsheng, director of the research department, introduced that as early as around 2002, the laboratory cooperated with Shanghai GM to carry out research on 1200 volt IGBT; in 2007, the institute set up a special fund for non-punch-through (NPT) IGBTs. Development; By 2010, when the country strongly supported this research, the research lab immediately stripped out the IGBT direction from the power device group and established a new IGBT project group.
"The project team only had two or three people at the time, but after two years of development, there are now nearly 30 people. These newcomers are all '80s' masters or doctors trained in China," said Han Zhengsheng.
Courage stems from the accumulation that “young people basically do not have any design experience and need to learn the most basic structure, principle, characteristics, and simulation design software of IGBT devices. During this period, thanks to experienced predecessors, gangs, and bands. Although young people learn the cycle It's very short and very strong, but there are some people who stand out from the crowd,†said Zhu Yangjun.
In the second half of 2010, after discussions with the team members, Zhu Yangjun made a decision that many people could not understand at the time: United Hua Hong NEC entered the trench gate IGBT design.
The trench gate is the most advanced design concept in the ultra-high voltage chip field. Compared with the previous planar gate, it has many performance and economic advantages, can significantly increase the market competitiveness of the chip, and represents the main technology trend of the future development of the IGBT industry.
But before this, no one in the team had contact with the trench gate, even if other domestic scientific research institutions did not have precedents for successful development.
In August 2010, the IGBT team began licking this hard bone. The first round of design trench gates, they spent a full 2 ​​months. Everyone has repeatedly calculated and simulated on the computer to ensure the accuracy of each link.
In November 2010, the chips designed by them reached the design requirements in the first round of filming at Shanghai Hua Hong NEC. At the end of 2010, they started the design of a 1,700-volt trench gate IGBT. After 3 months, the taped-out results passed the test, and the static and dynamic parameters of the product were all met.
After several rounds of cooperation, the microelectronics youth team and the Hua Hong NEC team have a good understanding and trust. When Zhu Yangjun saw Hua Hong's superior technological foundation and strength, another bold idea emerged: With Hua Hong NEC's existing technological capabilities, using the most advanced international design technology, the chip voltage will be raised directly by several steps.
After repeated consultations and communication with Hua Hong's craftsmen, in July 2011, the design research team implemented the 6500-volt IGBT R&D program that was planned to be launched in 2013.
This decision directly spans 3 technical steps of 2,500 volts, 3,300 volts, and 4,500 volts, and uses the most advanced technology known as "field cutoff" (FS).
Han Zhengsheng believes that “Although the design concept from planar gate to trench gate is completely different, from 1700 volts directly to 6500 volts, from non-through-type (NPT) to field stop (FS), there is a huge leap forward, but the history of microelectronics Accumulation and cultural atmosphere have given young people a deep foundation for innovation and a source of hard work."
"The director asks us to do what the enterprise did not think of or see. To help the company do what they can't do. We must try to leapfrog according to the needs of the country," said Zhu Yangjun.
Crossing the technical barriers, the young team of Microelectronics Institute is highly motivated. At present, they are full of expectation of independent intellectual property rights of IGBT chip full range of products, to achieve industrialization as soon as possible.
The reason why they are nervous is because they have not picked up as much as foreign scientific research institutes or enterprises, but instead slammed voltage from 1700 volts directly to 6500 volts. This huge technical jump not only considers their capabilities but also considers the technological basis of China's integrated circuits.
Not long ago, the test was over and their product blocking voltage reached over 7100 volts. Shanghai Hua Hong NEC immediately announced to the outside world: "This marks the domestic high-voltage high-power IGBT chip with independent intellectual property rights, and it has taken a new step from design and development to process development."
"80s after" mission and opportunities "The biggest difficulty in the development of IGBT design and technology." Said Zhu Yangjun, a tall team leader born in 1980.
Zhu Yangjun introduced that IGBT chips are classified according to the blocking voltage level for different application fields. Among them, the 6500 volt series is the highest voltage level product in the market. Only the very few manufacturers in Europe and Japan have the relevant technologies and production capabilities. Although there are many difficulties from the device structure design to the manufacturing process, the main difficulty is how to make the blocking voltage more than 6500 volts.
For them, designing such an ultra-high voltage chip can be difficult.
First of all, the domestic IGBT chip manufacturing process foundation is relatively weak, and behind a lot of foreign; Second, the domestic IGBT chip development personnel are scarce, there are few experienced engineers; Third, the higher the voltage, the greater the design difficulty, and simulation software The accuracy of the model is also a problem, and the design cycle will be longer and longer, the terminal design will be more complex and difficult; in addition, the design and the technology need to be combined perfectly, and the same design will have different results on different production lines.
Zhu Yangjun will always remember the words of Ye Tianchun, director of the Institute of Microelectronics of the Chinese Academy of Sciences. "Young people must dare to take responsibility and have a sense of responsibility and mission."
So, what is the mission of their generation in microelectronics?
IGBT devices have been widely used in the fields of power grid, rail transit, industrial frequency conversion, new energy, electric vehicles, and household appliances. The Chinese market has the largest demand for IGBTs in the world and maintains a rapid growth trend every year. However, almost all of China's IGBT devices rely on imports.
"Developing IGBT chips with independent intellectual property rights in China is one of the major missions of this team." Ye Tianchun said.
Ye Tianchun introduced that since the beginning of 2007, the country has gradually increased its research and development support in this area. The Ministry of Science and Technology, the National Development and Reform Commission, and the Ministry of Industry and Information Technology have gradually increased their investment in scientific research and industrialization. In particular, in 2010, the country implemented a major science and technology project for "very large-scale integrated circuit manufacturing equipment and complete sets of processes," and attacked the entire power electronics industry from raw materials, The three key links of chip manufacturing and module packaging give strong support.
The Silicon Devices and Integration Technology Research Laboratory of the Institute of Microelectronics of the Chinese Academy of Sciences thus welcomes new opportunities for expansion.
Han Zhengsheng, director of the research department, introduced that as early as around 2002, the laboratory cooperated with Shanghai GM to carry out research on 1200 volt IGBT; in 2007, the institute set up a special fund for non-punch-through (NPT) IGBTs. Development; By 2010, when the country strongly supported this research, the research lab immediately stripped out the IGBT direction from the power device group and established a new IGBT project group.
"The project team only had two or three people at the time, but after two years of development, there are now nearly 30 people. These newcomers are all '80s' masters or doctors trained in China," said Han Zhengsheng.
Courage stems from the accumulation that “young people basically do not have any design experience and need to learn the most basic structure, principle, characteristics, and simulation design software of IGBT devices. During this period, thanks to experienced predecessors, gangs, and bands. Although young people learn the cycle It's very short and very strong, but there are some people who stand out from the crowd,†said Zhu Yangjun.
In the second half of 2010, after discussions with the team members, Zhu Yangjun made a decision that many people could not understand at the time: United Hua Hong NEC entered the trench gate IGBT design.
The trench gate is the most advanced design concept in the ultra-high voltage chip field. Compared with the previous planar gate, it has many performance and economic advantages, can significantly increase the market competitiveness of the chip, and represents the main technology trend of the future development of the IGBT industry.
But before this, no one in the team had contact with the trench gate, even if other domestic scientific research institutions did not have precedents for successful development.
In August 2010, the IGBT team began licking this hard bone. The first round of design trench gates, they spent a full 2 ​​months. Everyone has repeatedly calculated and simulated on the computer to ensure the accuracy of each link.
In November 2010, the chips designed by them reached the design requirements in the first round of filming at Shanghai Hua Hong NEC. At the end of 2010, they started the design of a 1,700-volt trench gate IGBT. After 3 months, the taped-out results passed the test, and the static and dynamic parameters of the product were all met.
After several rounds of cooperation, the microelectronics youth team and the Hua Hong NEC team have a good understanding and trust. When Zhu Yangjun saw Hua Hong's superior technological foundation and strength, another bold idea emerged: With Hua Hong NEC's existing technological capabilities, using the most advanced international design technology, the chip voltage will be raised directly by several steps.
After repeated consultations and communication with Hua Hong's craftsmen, in July 2011, the design research team implemented the 6500-volt IGBT R&D program that was planned to be launched in 2013.
This decision directly spans 3 technical steps of 2,500 volts, 3,300 volts, and 4,500 volts, and uses the most advanced technology known as "field cutoff" (FS).
Han Zhengsheng believes that “Although the design concept from planar gate to trench gate is completely different, from 1700 volts directly to 6500 volts, from non-through-type (NPT) to field stop (FS), there is a huge leap forward, but the history of microelectronics Accumulation and cultural atmosphere have given young people a deep foundation for innovation and a source of hard work."
"The director asks us to do what the enterprise did not think of or see. To help the company do what they can't do. We must try to leapfrog according to the needs of the country," said Zhu Yangjun.
Crossing the technical barriers, the young team of Microelectronics Institute is highly motivated. At present, they are full of expectation of independent intellectual property rights of IGBT chip full range of products, to achieve industrialization as soon as possible.
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